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| PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition November 1997 Application * For E-GSM class4 880 to 915 MHz * For 3.5 V nominal battery use Features * * * * High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 -30 to +100 -30 to +100 5 Unit V A V mW C C W PF01411B Electrical Characteristics (Tc = 25C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS T 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 -- 40 -- -- -- 35.5 Typ -- -- -- 45 -45 -45 1.5 36.0 Max 915 2.2 100 -- -35 -35 3 -- Unit MHz V A % dBc dBc -- dBm VDD = 8 V, VAPC = 0 V Pin = 0 dBm, VDD = 3.5 V, Pout = 35.5 dBm, Vapc = controlled, RL = Rg = 50 , Tc = 25C Pin = 0 dBm, VDD = 3.5 V, VAPC = 2.2 V, RL = Rg = 50 , Tc = 25C Pin = 0 dBm, VDD = 3.0 V, VAPC = 2.2 V, RL = Rg = 50 , Tc = 85C Pin = 0 dBm, VDD = 3.5 V, VAPC = 0.5 V, RL = Rg = 50 , Tc = 25C Pin = 0 dBm, VDD = 3.5 V, Pout = 0 to 35.5 dBm, RL = Rg = 50 , Tc = 25C Pin = 0 dBm, VDD = 3 to 5.1 V, Pout 35.5 dBm, Vapc 2.2 V GSM pulse. Rg = 50 , Tc = 25C, Output VSWR = 6 : 1 All phases Pin = 0 dBm, VDD = 3 to 5.1 V, Pout 35.5 dBm, Vapc 2.2 V GSM pulse. Rg = 50 , t = 20 sec., Tc = 25C, Output VSWR = 10 : 1 All phases Test Condition Output power (2) Pout (2) 33.5 34.2 -- dBm Isolation -- -- -40 -36 dBm Switching time tr, tf -- 1 2 s Stability -- No parasitic oscillation -- Load VSWR tolerance -- No degradation -- 2 PF01411B Package Dimensions 3 PF01411B When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 |
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